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The deposition of germanium nanoparticles on hydrogenated amorphous silicon.
Stuchlík, J. ; Volodin, V.A. ; Shklyaev, A.A. ; Stuchlikova, T.H. ; Ledinsky, M. ; Čermák, J. ; Kupčík, Jaroslav ; Fajgar, R. ; Mortet, V. ; More-Chevalier, J. ; Ashcheulov, P. ; Purkrt, A. ; Remeš, Z.
We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 degrees C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.
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Characterization and tribological testing of a carbon-based nanolayer prepared by ion beam assisted deposition
Horažďovský, T. ; Kovač, J. ; Drbohlav, Ivo
Carbon-based nanolayers have been attracting much attention due to their excellent low-friction properties, their high hardness and their good wear resistance. In this work we present the results of material research aimed at reducing the friction of the functional surfaces of titanium implants, and thus extending their lifetime to reoperation. An analysis of the chemical composition showed that the modified surface is composed of a carbon-based nanolayer, a mixed interface, and a nitrogen-enriched sublayer. Raman spectroscopy showed the DLC character of the carbon-based nanolayer with sp2 rich bonds. A TiN compound was detected by X-ray diffraction in the modified surface area.\n
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Structure and properties of DLC layers for industrial applications
Mates, Tomáš ; Ledinský, Martin ; Vetushka, Aliaksi ; Pikna, Peter ; Fejfar, Antonín ; Marek, A. ; Vyskočil, J. ; Erichsen, J. ; Dawah, P.
Diamond-like carbon (DLC) layers based on amorphous carbon are used for wide range of applications, mostly for mechanical protection of various industrial components. We examined DLC layers at micro- and nanoscale by two independent microscopic techniques: Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) with a good agreement. We compared DLC layers grown on steel substrate and Si wafer and found similarly structured clusters and a certain difference in the density of nucleation centres. The measurements of local mechanical properties by the AFM tip revealed that the Si wafer behaves as softer material compared to the growing DLC nanoclusters that also exhibit lower values in the map of the relative local friction coefficient. Finally, we observed changes in the Raman spectra of the DLC exposed to annealing at ambient conditions and found a gradual shift from the diamond phase to the graphite phase as a function of increasing temperature.
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HYDROGENATION OF CHOSEN MgMXN INTERMETALLICS (X=Al, Ga, In, Si, Sn)
Čermák, Jiří ; Král, Lubomír ; Roupcová, Pavla
Hydrogen sorption in chosen intermetallics MgmXn (Mg17Al12 , Mg2Ga, mixture of beta-Mg-In phases, Mg2Si and Mg2Sn) formed by magnesium and elements from the 13 th (X: Al, Ga, In) and 14 th (X: Si, Sn) groups was studied between the room temperature and T = 350 °C. Hydrogen pressure p varied from 10-3 MPa to 6 MPa.\nHydrogen solubility in alpha phase (solid solution of hydrogen in MgmXn before the hydride phase was nucleated) was close to hydrogen solubility in pure Mg. Concentration cH of hydrogen solved in Mg m X n depended linearly on pressure p , dependence of cH on temperature T was relatively weak. MgH2 was the main hydrogen storage phase in all the compounds MgmXn . Nucleation of MgH2 at 350 °C was observed at pressure above approximately 1 MPa in Mg17Al12 and above 2 Ma in other compounds. Maximum values of c H in hydride-containing compounds MgmXn detected at T = 350 °C depended on the stability of MgmXn .
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HYDROGENATION PROPERTIES OF Mg-Al-Ti-Zr-C COMPOSITE
Král, Lubomír ; Čermák, Jiří ; Roupcová, Pavla
The improvement of hydrogen storage properties of ball-milled Mg-Al-Ti-Zr-C composite was studied in this\npaper. It has been previously shown, that the addition of Ti, Zr, Al and C improves storage properties of Mg.\nThis beneficial effect of additives upon hydrogen storage properties can be explained by catalysis by the\nnanoparticles rich in Ti, Zr or Al located on the surface of Mg grains. They provide effective pathways for the\nhydrogen diffusion into the MgH2. The morphological and microstructural characteristics were investigated by\nscanning electron microscope Tescan Lyra 3 and by X-ray diffraction. The hydrogen sorption was measured\nby Sieverts method using Setaram PCT-Pro device.\nStudied experimental composite absorbed 4.2 wt.% H 2 at 573 K and 3 wt.% H 2 at 523K within 10 min. The\nhydrogen storage capacity of the composite was about 4.6% wt.% H 2 and 4.2% wt.% H 2 at 573K and 523K,\nrespectively.
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Correlated microscopy of electronic and material properties of graphene grown on diamond thin films
Rezek, Bohuslav ; Čermák, Jan ; Varga, Marián ; Tulic, S. ; Skákalová, V. ; Waitz, T. ; Kromka, Alexander
In this work we compare growth of graphene on diamond thin films that enable large area processing. We use films with different crystal size and surface roughness to obtain deeper insight into formation and properties of GoD. The diamond films are coated by a nm thin sputtered Ni layer and heated to 900°C in a forming gas atmosphere (H2/Ar) to initiate catalytic thermal CVD process. The samples are cleaned from residual Ni after the growth process. We employ scanning electron microscopy, Raman micro-spectroscopy and Kelvin probe force microscopy to correlate material, structural, and electronic properties of graphene on diamond. We show how grain size and grain boundaries influence graphene growth and material and electronic properties. For instance we show that the grain boundaries (with non-diamond carbon phases) in diamond films have an important role. They influence the electronic properties and they are beneficial for forming graphene on diamond higher quality.
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Spatially separated HOMO/LUMO at interface of polypyrrole physisorbed on oxidized nanodiamond facets
Matunová, Petra ; Jirásek, Vít ; Rezek, Bohuslav
Nanodiamond particles (NDs) have recently risen in popularity owing to their unique and perspective properties. Merging NDs with organic molecules, such as polypyrrole (PPy), into hybrid organic-semiconductor functional systems gives rise to potential applications in photovoltaics (PV), which is supported by prior experimentally observed charge transfer between bulk diamond and PPy. This work focuses on the most relevant (111) and (100) O-terminated ND facets with different coverage of surface terminating oxygens in ether, epoxide, ketone, and peroxide positions. We use density functional theory (DFT) computations employing B3LYP functional and 6-31G(d) basis set. Energetically the most favorable oxidized ND facets were further optimized with PPy in physisorbed configurations. Analysis of geometry, binding energy, HOMO-LUMO gap, and charge transfer was done on the relaxed PPy-ND structures. Multiple hydrogen bonds are formed between PPy amino groups and O atoms on ND surface.
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The deposition of germanium nanoparticles on hydrogenated amorphous silicon
Stuchlík, Jiří ; Volodin, V.A. ; Shklyaev, A.A. ; Stuchlíková, The-Ha ; Ledinský, Martin ; Čermák, Jan ; Kupčík, Jaroslav ; Fajgar, Radek ; Mortet, Vincent ; More Chevalier, Joris ; Ashcheulov, Petr ; Purkrt, Adam ; Remeš, Zdeněk
We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 °C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.
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Preparation of zinc oxide nanorods colloid from thin layers
Mičová, Júlia ; Remeš, Zdeněk ; Chang, Yu-Ying ; Neykova, Neda
The interest in ZnO (zinc oxide) nanoparticles is increasing due to low cost of their processing as well as the ability of fabricating ZnO nanostructures with controllable morphology such as size, shape and orientation. Our choice of method of the preparation of the nanostructured thin ZnO layers is the hydrothermal growth of ZnO nanorods on glass substrates coated by the nucleation layer deposited by the reactive magnetron sputtering. We have developed and optimized conditions of the thin layer growth with controllable dimensions of nanorods followed by the ultrasound peeling. The colloid of ZnO nanorods was characterized by measuring the size of particles using the dynamic light scattering (DLS) and the scanning electron microscopy (SEM). We found that the dynamic light scattering (DLS) can’t be directly used for size evaluation of ZnO nanorods due to their non- sperical shape. \n
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